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    • ACS applied electronic materials Journal

    Papers
    Primitive and O-Functionalized R-Graphyne-like BN Sheet: Candidates for SO2 Sensor with High Sensitivity and Selectivity at Room Temperature
    Tongtong Li,Cheng He,Wenxue Zhang
    ACS APPLIED ELECTRONIC MATERIALS（2019）
    In recent years, the successful production of various boron nitride allotropes has raised exciting prospects for 2D materials in the nano device area. Herein, two novel two-dimensional boron nitride allotropes, a rectangular graphyne-like sheet (R-BNyne) and an O-functionalized R...
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    Micrometer-Scale Grating Vertical Structure OSC Ammonia Gas Sensor with a PEDOT:PSS Coupling Layer Using the Current Spreading Effect to Achieve Ppb-Regime Sensing Capability
    Chia-Wei Chen,Ju-Chun Hsieh, Yu-Chi Lin, Jen-Hao Chang, I-Chung Chen,Sheng-Fu Horng,Hsin-Fei Meng,Chia-Jung Lu,Hsiao-Wen Zan
    ACS APPLIED ELECTRONIC MATERIALS（2020）
    Organic semiconductor (OSC) gas sensors have grown into a widely discussed technology because of the presence of nanoscale fabrication processes. Thanks to the rapid development of nanotechnology, the performance of the OSC gas sensor has been pushed to the peak of its own and no...
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    Ni Doping in MnO2/MXene (Ti3C2TX) Composites to Modulate the Oxygen Vacancies for Boosting Microwave Absorption
    Xiaofen Wu,Ji Huang,Huiling Gu,Siyi Chen,Na Li,Yin Wang,Chengjun Dong,Gang Chen,Hongtao Guan
    ACS APPLIED ELECTRONIC MATERIALS（2022）
    Endowing composites with defects such as oxygen vacancies is an easy and effective strategy to determine the physical and chemical properties of nanomaterials. The influence of defects on microwave absorption remains a very open question. Herein, MnO2/Ti3C2Tx MXene composites are...
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    High-Quality Sputtered BiFeO3 for Ultrathin Epitaxial Films
    Tomohiro Ichinose,Daisuke Miura,Hiroshi Naganuma
    ACS Applied Electronic Materials（2021）
    BiFeO3 films were grown by RF magnetron sputtering with various O-2 gas flow ratios and substrate temperatures. The optimal sputtering conditions for a slightly excess Bi content produced high-quality parameters: an atomically flat surface (R-a < 0.4 nm), low leakage current (J(c...
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    Mott Switching and Structural Transition in the Metal Phase of VO2 Nanodomain
    Chang-Yong Kim,Tetiana Slusar,Jinchul Cho,Hyun-Tak Kim
    ACS Applied Electronic Materials（2021）
    VO2 undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near 67 degrees C. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition or a Peierls transition. This complica...
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    Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering
    Zonghuan Lu,Xixing Wen,Morris A. Washington,Toh-Ming Lu
    ACS APPLIED ELECTRONIC MATERIALS（2020）
    As an excellent semiconductor material with low band gap and high carrier mobility, germanium is widely used in the semiconductor industry in photoelectronic devices, high-frequency radio frequency (rf) circuits and devices, etc. Compared to bulk germanium wafer and silicon-based...
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    Graphene Nanosheets Enhanced Triboelectric Output Performances of PTFE Films
    Ping Yang,Pengfei Wang,Dongfeng Diao
    ACS Applied Electronic Materials（2022）
    The invention of Wang's triboelectric nanogenerator (TENG) in 2012 inspired an exciting strategy for solving the urgent global energy crisis and environmental issues. Graphene nanosheet-embedded polytetrafluoroethylene (GN-PTFE) films were produced using a micro-injection molding...
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    Self-Assembled Core–Shell Amorphous SiCx′Ny′Oz′@SiCxOy Composites with High Thermal Stability for Highly Effective Electromagnetic Wave Absorption
    Zhenbao Li,Jiabei He,Lihua Jin,Xueqian Liu,Botao Shao
    ACS applied electronic materials（2021）
    Core-shell amorphous SiCx,N-y,O-z,@SiCxOy composite with composition gradient between core and shell was prepared by self-assembling from polysilazane and divinyl benzene with subsequent curing and pyrolysis. Both eddy-current-induced conduction loss and heterogeneous interface a...
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    Free Deformable Nanofibers Enhanced Tribo-Sensors for Sleep and Tremor Monitoring
    Ran Cao,Shuyu Zhao,Congju Li
    ACS Applied Electronic Materials（2019）
    Stretchable and soft wearable electronics have aroused extensive interest. However, flexible, stretchable, and free deformable electronics, which can realize a perfect mechanical match with the curvy surface of skin, are still highly desired. Here, we present a free deformable tr...
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    Accurate Ruby Sensor for Stress Analysis in Electronics
    Wenli Yang,Fernando D. Cortes-Vega,Kamyar Ahmadi,Nathaly Castaneda,Mahesh Paidpilli,Goran Majkic,Venkat Selvamanickam,Stanko R. Brankovic,Francisco C. Robles-Hernandez
    ACS APPLIED ELECTRONIC MATERIALS（2022）
    In this work, we present a simple and cost-effective method to produce a stress sensor based on the luminescence response of ruby thin films. The proposed sensor has a multilayer configuration between the target film of YBa2Cu3O7-delta (YBCO), the nickel tape substrate, and a rub...
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    Wrinkled PDMS-Based Graphene Field Effect Transistor Biosensor
    Danyou Lim,Vahid Faramarzi,Sang Won Lee, Jingwon Kim, Sugeun Lee,Michael Taeyoung Hwang,Yongdeok Kim,Insu Park
    ACS APPLIED ELECTRONIC MATERIALS（2024）
    Real-time cell proliferation assays, incorporating fluorescent dyes into cells and bulky optical imaging systems, are the gold standard for cellular analysis at the single-cell level. As components of a simplified and miniaturized system, a conventional field-effect transistor (F...
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    Design and Verification of Optoelectronic Performance of Full GaN MSM and Μled Homogeneous Integrated Devices
    Chao Chen, Wenjuan Su, Juncheng Lin, Huichen Fan, Yibin Lin,Jinyu Ye,Xiongtu Zhou,Tailiang Guo,Chaoxing Wu,Yongai Zhang
    ACS APPLIED ELECTRONIC MATERIALS（2025）
    This study presents a metal-semiconductor-metal (MSM) and micro-light-emitting diode (mu LED) integrated device (MSM-mu LED) without additional epitaxial growth, which demonstrates excellent performance in ultraviolet (UV) detection and optoelectronic modulation. By employing an ...
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    Halogenated MXenes with Two-Dimensional Semiconductor InSe for Superior Electrode Contact Properties
    Gong Zhu, Xinting Jiang, Pengfei Hou,Yumiao Tian,Jiayi Liu,Yu Xie,Xing Meng
    ACS APPLIED ELECTRONIC MATERIALS（2025）
    The development of MXenes preparation methods has garnered significant attention toward halogens (Cl, Br, I) as newly synthesized terminating groups for MXenes. In this study, we analyzed the work functions of 44 halogen-terminated (F, Cl, Br, I) MXenes, elucidating the mechanism...
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    Recent Advances in Smart Organic Sensors for Environmental Monitoring Systems
    Hyun Woo Song,Wonbin Choi, Taesu Jeon,Joon Hak Oh
    ACS APPLIED ELECTRONIC MATERIALS（2023）
    The recent emergence of the Internet of Things (IoT) and the rise of artificial intelligence have led to substantial interest in gathering information through various sensing techniques. In particular, environmental sensing technologies implemented through the IoT have important ...
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    Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film
    Ulrich Haselmann,Y. Eren Suyolcu,Ping-Chun Wu,Yurii P. Ivanov,Daniel Knez,Peter A. van Aken,Ying-Hao Chu,Zaoli Zhang
    ACS Applied Electronic Materials（2021）
    The interaction of oxygen vacancies and ferroelectric domain walls is of great scientific interest because it leads to different domain-structure behaviors. Here, we use high-resolution scanning transmission electron microscopy to study the ferroelectric domain structure and oxyg...
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    Scalable T-Gate Aligned Gr–WS2–Gr Radio-Frequency Field-Effect Transistors
    Chao-Hui Yeh,Zheng-Yong Liang,Yung-Chang Lin,Chun-Hao Ma,Ying-Hao Chu,Kazu Suenaga,Po-Wen Chiu
    ACS APPLIED ELECTRONIC MATERIALS（2020）
    Gigahertz field-effect transistors (FETs) have been the imperative need for the development of nanoelectronics based on atomically thin transition metal dichalcogenides (TMDs). Yet, WS2 FETs workin...
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    Lifting-Force Maximization of a Micropatterned Electroadhesive Device Comparable to the Human-Finger Grip
    Kisuk Choi,Sung-Hoon Kim,Uiseok Hwang,Junyoung Kim,In-Kyung Park,Keon-Soo Jang,Hyoung Jin Choi,Hyouk Ryeol Choi,Taesung Kim,Jonghwan Suhr,Jae-Do Nam
    ACS Applied Electronic Materials（2020）
    Electroadhesion device allows one to pick up almost all of the objects regardless of their shape or type of materials by means of the electrostatic Maxwell force, which is developed due to the dielectric-induced polarization on the subject surface. In this study, we propose the m...
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    Temperature-Dependent Subcycling Behavior of Si-Doped HfO2 Ferroelectric Thin Films
    Shuaidong Li,Dayu Zhou,Zhixin Shi,Michael Hoffmann,Thomas Mikolajick,Uwe Schroeder
    ACS APPLIED ELECTRONIC MATERIALS（2021）
    The involvement of unwanted subcycling behavior in endurance cycling of HfO2-based ferroelectric thin films is detrimental to the reliability performance of nonvolatile memory devices. Subcycling is also critical for emerging neuromorphic applications as well as multilevel memory...
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    High-Efficiency Photodetector Based on a CVD-Grown WS2 Monolayer
    Rakesh K. Prasad,Koushik Ghosh,Pravat K. Giri,Dai-Sik Kim,Dilip K. Singh
    ACS APPLIED ELECTRONIC MATERIALS（2023）
    Future generation technologies demand high efficiencyphotodetectorsto enable sensing and switching devices for ultrafast communicationand machine vision. This requires direct-band gap materials with highphotosensitivity, high detectivity, and high quantum efficiency. Monolayeredt...
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    Colossal Permittivity Ti1–x(Eu0.5Ta0.5)xO2 Ceramics with Excellent Thermal Stability
    Menglong Wang,Lingxia Li,Kai Zhang,Jialing Xie
    ACS APPLIED ELECTRONIC MATERIALS（2020）
    The lack of systematic investigations on composition dependence, phase structures, and microstructures impedes the full understanding of the colossal-permittivity (CP) behavior of acceptor and donor co-doped TiO2 ceramics. In this work, a system of Ti1-x(Eu0.5Ta0.5 )(x)O-2 cerami...
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