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Terahertz In0.8Ga0.2As quantum-well HEMTs toward 6G applications
On the universality of drain-induced-barrier-lowering in field-effect transistors
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
Terahertz In0.8Ga0.2As quantum-well HEMTs toward 6G applications
On the universality of drain-induced-barrier-lowering in field-effect transistors
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
研究兴趣
论文共 320 篇作者统计合作学者相似作者
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SOLID-STATE ELECTRONICS (2024)
Scientific reportsno. 1 (2024)
S. Acharya,S. Das,Gianluca Aglieri Rinella,Z. Ahammed,Shakeel Ahmad,Sunil Ahn, A. Akindinov, Mohammad Al-Turany, D. Aleksandrov,Haidar Mas'Ud Alfanda, N. Alizadehvandchali,Anton Alkin,
The Journal of high energy physics/The journal of high energy physicsno. 5 (2024)
Belle II Collaboration, I. Adachi,K. Adamczyk,L. Aggarwal, H. Aihara,N. Akopov, A. Aloisio,N. Anh Ky,D. M. Asner, H. Atmacan, T. Aushev,V. Aushev,
arxiv(2024)
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IEEE ELECTRON DEVICE LETTERSno. 9 (2024): 1673-1676
I. Adachi, L. Aggarwal, H. Ahmed, H. Aihara,Н. Акопов, A. Aloisio, N. Anh Ky, D. M. Asner, H. Atmacan, T. Aushev, V. Aushev,M. Aversano,
Physical review D/Physical review Dno. 11 (2024)
The Belle II Collaboration,I. Adachi,L. Aggarwal,H. Ahmed,J. K. Ahn,H. Aihara,N. Akopov,A. Aloisio,N. Althubiti,N. Anh Ky,D. M. Asner, H. Atmacan,
Chinese Physics C (2024)
Seung Heon Shin,Hyeon-Seok Jeong, Yong-Hyun Kim, Yong -Soo Jeon,Ji-Min Beak,Wan -Soo Park,In-Geun Lee,Jacob Yun,Ted Kim,Jae-Hak Lee,Hyuk-Min Kwon,Dae-Hyun Kim
Solid-State Electronics (2024): 108933-108933
Belle II Collaboration, I. Adachi,L. Aggarwal, H. Ahmed, H. Aihara,N. Akopov, A. Aloisio,N. Anh Ky,D. M. Asner, H. Atmacan, T. Aushev,V. Aushev,
arxiv(2024)
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