Seung Ji Bae - Sch Elect & Elect Engn, Kyungpook Natl Univ

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论文共 11 篇作者统计合作学者相似作者

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Novel Three-Dimensional Stacked Capacitorless DRAM Architecture Using Partially Etched Nanosheets for High-Density Memory Applications

Min Seok Kim, Sang Ho Lee,Jin Park,Seung Ji Bae,Jeong Woo Hong, Won Suk Koh, Gang San Yun,Jaewon Jang,Jin-Hyuk Bae,In Man Kang

Discover Nanono. 1 (2025): 1-11

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Design and Analysis of Quasi-Vertical Multi-Fin GaN Power Devices Based on Epitaxially Grown GaN-on-sapphire

Jeong Woo Hong, Sang Ho Lee,Jin Park, Min Seok Kim,Seung Ji Bae, Won Suk Koh, Gang San Yun, In Man Kang

Journal of Science Advanced Materials and Devices（2025）

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Statistical Analysis of Vertically Stacked Nanosheet Complementary FET Based on Polycrystalline Silicon with Multiple Grain Boundaries

Jin Park,Sang Ho Lee,So Ra Jeon,Min Seok Kim,Seung Ji Bae,Jeong Woo Hong, Gang San Yun, Won Suk Koh,Jaewon Jang,Jin-Hyuk Bae,Young Jun Yoon,In Man Kang

Results in Physics (2024): 107873

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Simulation of Capacitorless DRAM Based on Polycrystalline Silicon with a Vertical Underlap Structure and a Separated Channel Layer

Seung Ji Bae,Sang Ho Lee,Jin Park,Ga Eon Kang,Jun Hyeok Heo,So Ra Jeon,Min Seok Kim,Jeong Woo Hong,Jaewon Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In Man Kang

JAPANESE JOURNAL OF APPLIED PHYSICSno. 3 (2024)

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Statistical Analysis of Increased Immunity to Poly-Si Grain Boundaries in Nanosheet CMOS Logic Inverter Through Sheet Stacking

Min Seok Kim,Sang Ho Lee,Jin Park,So Ra Jeon,Seung Ji Bae,Jeong Woo Hong,Jaewon Jang,Jin-Hyuk Bae,Young Jun Yoon,In Man Kang

Siliconpp.1-10, (2024)

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Bulk Fin-Type Field-Effect Transistor-Based Capacitorless Dynamic Random-Access Memory with Strong Resistance to Geometrical Variations

Min Seok Kim,Sang Ho Lee,Jin Park,Ga Eon Kang,Jun Hyeok Heo,So Ra Jeon,Seung Ji Bae,Jeong Woo Hong,Jaewon Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In Man Kang

JAPANESE JOURNAL OF APPLIED PHYSICSno. 3 (2024)

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Effect of Geometrical Variations on Bulk FinFET-Based Capacitorless DRAM

Min Seok Kim,Sang Ho Lee,Jin Park,Ga Eon Kang,Jun Hyeok Heo,So Ra Jeon,Jeong Woo Hong,Seung Ji Bae,In Man Kang

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

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Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

Seung Ji Bae,Sang Ho Lee,Jin Park,Ga Eon Kang,Jun Hyeok Heo,So Ra Jeon,Min Seok Kim,Jeong Woo Hong,Jaewon Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In Man Kang

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

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Design of a Vertical Cylinder GaN Junctionless FET Based on Its GaN-on-GaN Substrate and Electrical Performance

So-Ra Jeon, Sang-Ho Lee,Jin Park,Ga-Eon Kang,Jun Hyeok Heo, Min Seok Kim,Seung Ji Bae,Jeong Woo Hong,In Man Kang

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE（2023）

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Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

Jin Park,Sang-Ho Lee,Ga-Eon Kang,Jun-Hyeok Heo,So-Ra Jeon,Min-Seok Kim,Seung-Ji Bae,Jeong-Woo Hong,Jae-won Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In-Man Kang

NANOMATERIALSno. 13 (2023)

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