Studies of the Dependence on Oxidation Thermal Processes of Effects on the Electrical Properties of Silicon Detectors by Fast Neutron Radiation
Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference(2002)
关键词
neutron effects,oxidation,semiconductor counters,semiconductor diodes,975 to 1200 degC,MOS capacitors,Si-SiO/sub 2/,back-to-back diodes,capacitance-voltage,current-voltage,fast neutron irradiation,leakage current,light resistivity Si detector,oxidation thermal processes,resistors,type-inversion
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