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Dielectric Functions and the Interband Critical Points of InAs0.05Sb0.95 Film Grown by a Modified LPE Technique

S. H. Hu,G. L. Yu,J. Ge,R. Wang,Y. Sun,J. Wu,Q. W. Wang,N. Dai

Physica B Condensed Matter（2009）

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Key words
InAs0.05Sb0.95 film,Modified LPE technique,Spectroscopic-ellipsometry,High-lying interband structure
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