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Development of N+-in-p Planar Pixel Sensors for Extremely High Radiation Environments, Designed to Retain High Efficiency after Irradiation

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment(2016)

Cited 9|Views20
Key words
n-in-p,p-type,Pixel,Silicon,Radiation damage,HL-LHC
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