Experimental Comparative Analysis Between Junctionless and Inversion Mode Nanowire Transistors Down to 10 Nm-Long Channel Lengths
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2017）
Key words
Junctioless transistors,Undoped Nanowires,SOI Technology,DIBL,Subthreshold swing,Transconductance
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