A precision voltage and current reference for the SNAP CCD readout IC

B Krieger,G Chao, I Grosshans,A Karcher,S Kurz, J Walder

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE（2007）

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关键词

cmos integrated circuits,charge-coupled devices,integrated circuit layout,nuclear electronics,readout electronics,reference circuits,semiconductor device measurement,semiconductor device models,silicon radiation detectors,snap ccd readout ic,bandgap reference circuit,extracted diode model,fixed diode layout,forward-biased junction device,parameter extraction,prototype ic,silicon,submicron cmos processes,temperature -150 c to 70 c,temperature compensated reference current,topology,voltage 10 mv,voltage 2.5 v,voltage 35 mv,voltage reference

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