Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2019）
Key words
compressive strains,channel release,compressive inter-layer dielectric,tensile strain,integration flow,strain engineering,TEM,numerical models,gate-all-around nanosheet transitors,compressive silicon germanium channels,GAANS silicon-channel,horizontally stacked gate-all-around nanosheet transistors,advanced transmission electron microscopy,channel stresses,contact test modules,gate stack,size 10.0 nm,SiGe,Si
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