Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses

H. Dewitte,S. Rizzolo,P. Paillet,P. Magnan,A. Le Roch,F. Corbiere,R. Molina,S. Girard,T. Allanche,C. Muller,H. Desjonqueres,J. -R. Mace,J. -P. Baudu,A. Saravia Flores,V. Goiffon

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2020）

Cited 1|Views31

Key words

Annealing,Radiation effects,Degradation,Transistors,Radiation hardening (electronics),Logic gates,Dark current,Annealing,CMOS image sensors (CISs),CMOS technology,dark current,total ionizing dose (TID)

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