Design-Stage Hardening of 65-Nm CMOS Standard Cells Against Multiple Events

Anton O. Balbekov,Maxim S. Gorbunov,Artur M. Galimov

IEEE Transactions on Nuclear Science（2021）

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关键词

Layout,Transistors,Inverters,Substrates,Resistors,Tools,Standards,Design recommendations,layout of rad-hard cells,layout-aware SPICE simulation,single-event transient (SET),single-event upset (SEU)

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