Search for triple and quadruple beta decay of ¹⁵⁰Nd using low-background HPGe detector

Abstract Triple beta decay of 150Nd to the ground and excited states of 150Eu and quadruple beta decay of 150Nd to the excited states of 150Gd have been studied using a 400 cm3 low-background HPGe detector. A half-life limit for the quadruple beta decay to the 0 1 + state of 150Gd was found to be T1/2(0v + 4v) > 8.7 × 1020 yr (90% C.L.). For other (0v+4v) transitions to the excited states limits for the first time have been obtained at the level of (6.1 − 9.5) × 1020 yr (90% C.L.). We report here also the results for the first search for triple beta decay to the ground and excited final states of 150Eu, T 1/2(0v + 3v) > (0.04 − 4.8) × 1020 yr (90% C.L.).