Interface States Passivation for p-Channel 4H-SiC MOS DevicesSuman Das,Tamara Isaacs-smith,Ayayi Ahyi,Marcelo Kuroda,Sarit DharECS Meeting Abstracts（2021）引用 0|浏览15暂无评分关键词Metal Gate Transistors,Interface Engineering,Interconnect Scaling,IGBT Modules,Electrical ResistivityAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
