Lg = 130 Nm GAA MBCFETs with Three-Level Stacked In0.53Ga0.47As Nanosheets

H.-B. Jo,I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee,D. Y. Yun,SW. Son,D.-H. Ko,Tae-Woo Kim,H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim,J. Yun,T. Kim,J. H. Lee,J.-H. Lee,C.-S. Shin,K.-S. Seo,Dae-Hyun Kim

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

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关键词

three-level stacked In0.53Ga0.47As nanosheets,GAA MBCFETs,gate-all-around multibridge channel FETs,S-D regrowth process,precision dry etching,selective wet etching,sacrificial layers,metal gate,ALD,size 300.0 nm,size 15.0 nm,voltage 0.8 V,size 130.0 nm,TiN,In0.53Ga0.47As,HfO2

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