Probing Defects and Spin‐Phonon Coupling in CrSBr Via Resonant Raman Scattering

ADVANCED FUNCTIONAL MATERIALS(2023)

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摘要
Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, defects in mono- to multilayer CrSBr are correlated with structural, vibrational, and magnetic properties. Resonant Raman scattering is used to reveal distinct vibrational defect signatures. In pristine CrSBr, it is shown that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. Environmental exposure is shown to cause drastic degradation in monolayers, with the formation of intralayer defects. This is in contrast to multilayers that predominantly show bromine surface defects. Through deliberate ion irradiation, the formation of defect modes is tuned: these are strongly polarized and resonantly enhanced, reflecting the quasi--1D electronic character of CrSBr. Strikingly, pronounced signatures of spin-phonon coupling of the intrinsic phonon modes and the ion beam-induced defect modes are observed throughout the magnetic transition temperature. Overall, defect engineering of magnetic properties is possible, with resonant Raman spectroscopy serving as a direct fingerprint of magnetic phases and defects in CrSBr.
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关键词
2D magnetic semiconductors,CrSBr,defects,interlayer coupling,spin-phonon coupling
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