Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Stefano Bonaldo,Trace Wallace,Hugh Barnaby,Giulio Borghello,Gennaro Termo,Federico Faccio,Daniel M. Fleetwood,Serena Mattiazzo,Marta Bagatin,Alessandro Paccagnella,Simone Gerardin

IEEE Transactions on Nuclear Science（2023）

Cited 0|Views17

Key words

Transistors,Degradation,FinFETs,Radiation effects,Logic gates,Annealing,Leakage currents,16 nm,bias condition,charge trapping,FinFET,low-frequency noise,radiation effects,shallow trench isolation (STI),total ionizing dose (TID)

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