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Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16Nm

L. Artola,M. Glorieux,G. Hubert,C. Inguimbert, T. Bonnoit,R. Rey, T. Lange, D. Levacq,C. Poivey

IEEE Transactions on Nuclear Science(2024)

Cited 0|Views7
Key words
Protons,Particle beams,Integrated circuit modeling,Single event upsets,SRAM cells,Performance evaluation,FinFETs,Angle impact,CMOS,FinFET,low-energy protons,radiation tests,simulation,SRAM
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