A Study of Channeling, Volume Reflection and Volume Capture of 3.35-14.0 GeV Electrons in a Bent Silicon CrystalTn Wistisen,UI Uggerhøj,U. Wienands,T. W. Markiewicz,Rj Noble, Bl Benson,T. Smith,E. Bagli,L. Bandiera,G. Germogli,V. Guidi,A. Mazzolari, D. L. Kreinick,Sam TuckerPhysics Letters B（2015）引用 23|浏览2AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
