Full C-band Tunable Integrated Erbium Lasers Via Wafer-Scale Fabrication

2024 Conference on Lasers and Electro-Optics (CLEO)(2024)

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Abstract
We demonstrate an integrated Erbium-based tunable laser using wafer-scale fabrication and ion implantation of silicon nitride photonic integrated circuits, and achieve single-frequency lasing tunable from 1530 nm to 1575 nm covering the entire optical C-band.
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Key words
Wafer-scale Fabrication,Gold Standard,Ionizing Radiation,Low Loss,Separate Lines,Silicon Nitride,Frequency Noise,Tunable Laser,Fiber Laser,Phase Noise,Pump Laser,Plasma-enhanced Chemical Vapor Deposition,Photonic Integrated Circuits,Optical Pumping,Welch’s Method,Gain Coefficient,Free Spectral Range,Photonic Circuits,Pump Source,Mode Area
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