Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses
IEEE Transactions on Nuclear Science（2024）
Key words
Silicon carbide,Logic gates,MOSFET,Degradation,Radiation effects,Temperature measurement,Protons,Displacement damage (DD),protons,silicon carbide (SiC) power MOSFETs,total-ionizing dose (TID),ultrahigh doses,X-rays
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