Molecular Beam Epitaxy Synthesis and Electrical Transport Properties of the Correlated Kagome Metal Ni3In

${\mathrm{Ni}}_{3}\mathrm{In}$ is a paramagnetic intermetallic consisting of $AB$-stacked Ni-kagome networks. Correlated electron behaviors deviating from the Fermi-liquid form have recently been observed in ${\mathrm{Ni}}_{3}\mathrm{In}$ bulk single crystals, attributed to stabilization of a partially flat electronic band near the Fermi level. Synthesis of this system in thin-film form offers unique opportunities for tuning of materials that could aid in identifying the microscopic origin of the non-Fermi-liquid response and exploring the suspected quantum criticality therein. Here, we report the realization of (001)-oriented epitaxial thin films of ${\mathrm{Ni}}_{3}\mathrm{In}$ on single-crystal ${\mathrm{SrTiO}}_{3}$ (111) substrates by molecular beam epitaxy. Via control of growth conditions, we fabricate high-quality films with quantum fluctuations strongly influencing the physical properties of the system. Analysis of the electrical transport response reveals that intrinsic spin fluctuations in ${\mathrm{Ni}}_{3}\mathrm{In}$ may account for the observed non-Fermi-liquid behavior. Such structures may facilitate driving ${\mathrm{Ni}}_{3}\mathrm{In}$ across a potential quantum critical phase transition and uncover the role of unusual flat bands in triggering correlated phenomena.