Improved power and temperature performance of half-disk diode microlasers

The power and temperature characteristics of & Oslash;200 mu m half -disk microlasers with a half -ring metal contact and high -density InGaAs/GaAs quantum dots are studied. In a continuous wave (CW) mode, the maximal optical power at 20 degrees C was 134 mW, and the maximal CW lasing temperature reached 113 degrees C. In a pulsed regime the maximal optical power of 1.6 W, limited by catastrophic degradation, was achieved. By comparing the CW and pulsed current-voltage characteristics, the dependence of a microlaser temperature on CW pumping current was determined. At CW currents corresponding to the maximal wall -plug efficiency, the maximal optical power, and complete lasing quenching, the laser temperatures were 60, 99, and 149 degrees C, respectively. (c) 2024 Optica Publishing Group