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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono,Ryo Tanaka,Shinya Takashima,Katsunori Ueno,Masaharu Edo,Kohei Shima,Shigefusa F. Chichibu,Jun Uzuhashi,Tadakatsu Ohkubo,Shoji Ishibashi,Kacper Sierakowski,Michal Bockowski

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS（2024）

引用 1|浏览27
关键词
defects,dislocation,GaN,ion implantation,vacancy
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