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Enhanced Field-Effect Mobility (> 250 Cm2/v·s) in GaN MOSFETs with Deposited Gate Oxides Via Mist CVD

Kazuki Ikeyama,Hidemoto Tomita, Sayaka Harada,Takashi Okawa,Li Liu,Toshiyuki Kawaharamura, Hiroki Miyake,Yoshitaka Nagasato

APPLIED PHYSICS EXPRESS（2024）

引用 0|浏览11
关键词
GaN,field effect mobility,mist CVD,MOSFET,vertical power device
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