Bandgap Regulation and Doping Modification of Ga2-xCrxSe3 Nanosheets

Huan Yang,Yue Wu,Huirong Li,Yiwen Zhang, Linmei Gao,Lanfang Wang,Fang Wang

RSC ADVANCES（2024）

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摘要

By adjusting the annealing temperature (150–300 °C) and introducing varying Cr doping concentrations, the optical bandgap of Ga2−xCrxSe3 was continuously tunable in the range of 2.23 to 2.80 eV.

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