Multiparameter Admittance Spectroscopy for Investigating Defects in MoS_2 Thin Film MOSFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Logic gates,Electrons,Surface impedance,MOSFET,Surface morphology,Voltage measurement,Voltage,Substrates,Schottky barriers,Nickel,Conductance method,electron traps,molybdenum disulfide (MoS2) field-effect transistor (FET),multiparameter admittance spectroscopy (MPAS),thin-film metal-oxide-semiconductor field-effect transistors (MOSFETs)
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