TCAD Modeling of Radiation-Induced Defects in 4H-Sic Diodes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT（2025）
Key words
Silicon carbide,Radiation damage to detector materials (solid sate),TCAD,Numerical simulations,Defect states
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined