Atomic Structure of Self-Buffered BaZr(S,Se)_3 Epitaxial Thin Film Interfaces
arxiv(2024)
摘要
Understanding and controlling the growth of chalcogenide perovskite thin
films through interface design is important for tailoring film properties.
Here, the film and interface structure of BaZr(S,Se)_3 thin films grown on
LaAlO_3 by molecular beam epitaxy and post-growth anion exchange is resolved
using aberration-corrected scanning transmission electron microscopy. Epitaxial
films are achieved from self-assembly of an interface “buffer” layer, which
accommodates the large film/substrate lattice mismatch of nearly 40% for the
alloy film studied here. The self-assembled buffer layer, occurring for both
the as-grown sulfide and post-selenization alloy films, is shown to have
rock-salt-like atomic stacking akin to a Ruddlesden-Popper phase. Above this
buffer, the film quickly transitions to the perovskite structure. Overall,
these results provide insights into oxide-chalcogenide heteroepitaxial film
growth, illustrating a process that yields relaxed, crystalline, epitaxial
chalcogenide perovskite films that support ongoing studies of optoelectronic
and device properties.
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