Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of High-Frequency and Low-Noise Performance for Quantum-Computins Applications

J.-H. Yoo, Y.-S. Jeon,S.-W. Son,I.-G. Lee,H.-B. Jo, S.-M. Choi, M.-S. Yu, W.-S. Park, H.-J. Kim, H.-J. Lee,S.-P. Son, S. K. Kim,J. Yun, J.-P. Shim, H. Jang, K. Lee,Y. Jeong,T. Kim,C.-S. Shin,T.-W. Kim, J.-H. Lee,K.-S. Seo, K. Yang,D.-H. Kim

Symposium on VLSI Technology（2024）

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关键词

Low Noise Performance,Carrier Transport,Three-layer Model,Decrease In Temperature,Small-signal Model,Future Quantum,Single Supply,Superior Transport

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