Thin Silicon Sensors for Extreme Fluences: A Doping Compensation Strategy

The CompleX project aims at extending the operation range of silicon detectors as 4D trackers up to 5 × 1017 neqcm−2. The project envisions achieving this unprecedented radiation tolerance through a novel comprehension of radiation damage saturation, and an innovative design for the Low-Gain Avalanche Diodes (LGADs) gain layer with compensated implants. This innovative LGAD design, featuring a co-implantation of acceptor and donor dopants, represents a paradigm shift in radiation-resistant sensor technology. It potentially enables compensated LGADs to maintain functionality at fluences exceeding 1017 neqcm−2, significantly extending the operational lifetime of conventional LGAD sensors under extreme fluence conditions. This advantage is further enhanced by the inherent radiation tolerance of thin substrates. This work presents simulations and measurements from the first compensated LGAD production (late 2022, FBK foundry) before and after neutrons irradiation. Numerical modeling strategies using state-of-the-art Technology-CAD tools quantify the reduction in acceptor removal rate due to carbon co-implantation and investigate the behavior of donor removal under irradiation. This comprehensive approach paves the way for the development of highly efficient tracking detectors for future collider experiments.