Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices

Radiation damage test in hydrogenated amorphous silicon (a-Si H) flux and dose-measuring flexible devices has been performed with a 3 MeV proton beam to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses: The first device was a $2 \mu \mathrm{m}$ thick $\mathbf{n - i}-\mathbf{p}$ diode having a $5 \mathrm{~mm} \times 5 \mathrm{~mm}$ area. The second device was a $5 \mu \mathrm{m}$ thick charge selective contact detector having the same area. Both the devices were deposited on a flexible Polyimide substrate and were irradiated up to the fluence of $10^{16} \mathrm{n}_{\mathrm{eq}} / \mathrm{cm}^{2}$. The effect of annealing for partial sensitivity recovery at $100^{\circ} \mathrm{C}$ for 12 hours was also studied, and a final characterization of the annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.