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Displacement Damage and Total Ionizing Dose Induced by 3-Mev Protons in SiC Vertical Power MOSFETs

C. Martinella,S. Bonaldo,M. Bagatin,S. Gerardin, N. Für, V. Gassenmeier, H. Goncalves de Medeiros,A. Paccagnella,U. Grossner

IEEE Transactions on Nuclear Science（2024）

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Key words
SiC power MOSFETs,power devices,TID,DD,protons,ultra-high doses
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