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TID Effects in the Lateral STI Oxide of Planar CMOS Transistors

Stefano Bonaldo,Giulio Borghello,Federico Faccio,Marta Bagatin,Serena Mattiazzo,Simone Gerardin

IEEE Transactions on Nuclear Science（2024）

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Key words
Total ionizing dose,charge trapping,shallow trench isolation,STI corner,MOS,bias condition,TID rebound
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