A Systematic Study of Charge-Trapping Phenomenon in FeFET on FDSOI Via Low-Frequency Noise Spectroscopy
IEEE ELECTRON DEVICE LETTERS（2025）
Key words
FeFETs,Logic gates,Silicon-on-insulator,Iron,Hysteresis,Fabrication,Voltage measurement,Spectroscopy,Nonvolatile memory,Noise measurement,Charge trapping,defect,FDSOI,ferroelectric (Fe),HZO,LFN,memory window (MW)
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined