High Performance FeFET with Α-Igzo Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer
2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)（2024）
关键词
atomic layer deposited,interfacial layer,HfO.5Zr0.5O2,memory window,reliability
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